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Silicon photomultiplier(SIPM) | SIMTRUM Photonics Store

Silicon photomultiplier(SIPM)(300-950nm)

The silicon photomultiplier (SiPM) detector with amplification is composed of a large number of avalanche photodiodes (APDs) operating in Geiger mode. It has high photon detection efficiency in the ultraviolet to visible light range. Each pixel can be biased above the breakdown voltage, and higher PDE and gain can be achieved at high bias voltages, making it suitable for low-light detection. Under low bias voltage, lower dark counts and crosstalk probabilities can be obtained.

 

Unlike photomultiplier tubes (PMT), SiPM detectors are not affected by magnetic fields and will not be damaged by ambient light. Both detectors can amplify very weak signals and have similar gain levels, but PMT usually covers a larger active region, while SiPM is more compact in size. Although the two detectors have comparable detection efficiency, the working voltage of SiPM is much lower, which can provide a larger dynamic range.

 

Applying an external bias voltage to the SiPM detector can make the APD pixels operate at a voltage higher than their breakdown voltage, thereby generating a strong electric field. When a single photon is absorbed, electron-hole pairs are produced. The electric field accelerates the electrons, and secondary electrons are generated through collision ionization. The resulting avalanche constitutes the gain of the SiPM detector, and the avalanche varies according to the applied bias voltage.

 

 The SiPM detector can improve the gain and photon detection efficiency (PDE) of the detector by adjusting its bias level. However, increasing the bias level will also increase crosstalk behavior and amplify the dark current, thereby increasing the dark count. Increasing the bias level will also improve the transit time extension and reduce the time required for the output signal after the light is incident. Generally speaking, for applications with high gain or PDE, a higher bias level can be set, while for applications requiring low noise, a lower bias voltage can be set.

 

For different models of SiPM, the pixel size, active area and sensitivity are all different. Generally, SIPMs with large pixel sizes can offer higher gain and PDE, while those with small pixel sizes can provide faster response speeds and a wider dynamic range. Sipms with larger active regions are more suitable for applications that require a wider dynamic range, while smaller active regions offer higher response speeds and lower dark counts. The PDE of the SiPM detector is comparable to the quantum efficiency (QE) of the photomultiplier tube (PMT). However, the SiPM detector can provide a larger dynamic range.

 

  • Geiger mode: In this mode, the operating voltage of the diode is slightly higher than the breakdown threshold voltage. Therefore, a single electron-hole pair (generated by absorbing photons or thermal fluctuations) can trigger a strong avalanche. Each pixel in the SiPM detector contains the APD in Geiger mode.
  • Dark count rate: The average rate at which counts are recorded in the absence of any incident light, and it determines the minimum count rate caused by real photons. It can be suppressed by using a cooling detector.
  • Dead time: It is the time interval that the detector spends in the recovery state. During this period, the detector is insensitive to incident photons. The simultaneous dead time of multiple pixels in the SiPM detector will affect the dynamic range of the detector. 
  • Post-pulse: During an avalanche, some charges can be trapped in the high-field region of the pixel. When these charges are released, they will trigger an avalanche. The lifetime of these trapped charges is only a few tenths of a microsecond. Therefore, it is very likely that a post-pulse will occur directly after the signal pulse.
  • Crosstalk: Crosstalk occurs when an avalanche generated by one pixel triggers a secondary avalanche of adjacent pixels.

 

Features

  • The PDE is as high as 31% to 47%
  • The bias voltage is adjustable
  • Low dark count rate
  • Not affected by magnetic field interference
  • The gain is as high as 6*10^6
  • Wide spectral coverage range (300-950 nm)
  • Effective area: 1mm*1mm/3mm*3mm/6mm*6mm

Application

  • LiDAR
  • Detection of contraband
  • Bioluminescence and fluorescence detection
  • Positron emission tomography (PET)
  • Single Photon Emission Computed tomography (SPECT)

 

 


 

Product specifications

 

Product Model SIM_SiPM_01A SIM_SiPM_01B SIM_SiPM_01C* SIM_SiPM_03B* SIM_SiPM_03C* SIM_SiPM_03D SIM_SiPM_06C*
 Active Area 1*1mm 3*3mm 6*6mm
 Microcell Size 10um 20um 35um 20um 35um 50um 35um
 Photon Detection Efficiency(PDE) 18% 31% 41% 31% 41% 47% 41%
 No. of microcells 2880 1296 504 10998 4774 2668 18980
 Gain 2*10^5 1*10^6 3*10^6 1*10^6 3*10^6 6*10^6 3*10^6
 Spectral Range 300-950nm
 Peak Wavelength(λp) 420nm
 Dark Voltage 2mV
 Temperature dependence of Gain -0.8%/
 Output Voltage 0-5V
 Window Material Borosilicate Glass
 Window Refractive Index 1.59@420nm
 Cooling Natural Cooling
 Power 1W
 Operating Voltage 220VAC 50Hz
 Operating Temperature
 (Non-condensing)
10~25
 Storage Temperature 0~55
 Attachment Rotating magnetic rod support * optional

 

 

Performance

PDE versus Wavelength

Responsivity versus Wavelength

Dark Current versus Voltage and Temperature

Dark Count Rate versus Overvoltage

 

Components

 


Positron Emission Tomography (PET)

 

 

 

LiDAR

 

 

 

Security and Safely System

Bioluminescence (Flow Cytometry)

 

Optical Platform Applications

 

Point Scanning Microscopy Application for Chip Samples


Visible Single Photon Detector(SPD)

Model
Wavelength Range
Timing Resolution
QE 
Dark Count Rate
  Silicon APD Detection Module 200 -1060nm 65%@700nm,2%@200nm <200cps to <500cps
  Visible SPD (Peak QE~500nm) 350 - 1000nm <40ps 35%@500nm, 25%@600nm <7Hz  to <250Hz
  Visible SPD (Peak QE~800nm) 350 - 1000nm <200ps
60%@640nm, 80%@800nm <300Hz to <1000Hz
  Visible Photon Counter OEM
350 - 900nm 40 -60ps 35%@500nm,4%@900nm <30Hz to <300Hz

 


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Compare Model Drawings & Specs Availability Reference Price
(USD)
SIM_SiPM_01A
SIM_SiPM_01A,Active Area 1*1mm,Microcell Size 10um,Photon Detection Efficiency 18%,No. of microcells 2880,Gain 2*10^5,Spectral Range 300-950nm
12-16 weeks $254.20
SIM_SiPM_01B
SIM_SiPM_01B,Active Area 1*1mm,Microcell Size 20um,Photon Detection Efficiency 31%,No. of microcells 1296,Gain 1*10^6,Spectral Range 300-950nm
12-16 weeks $254.20
SIM_SiPM_01C
SIM_SiPM_01C,Active Area 1*1mm,Microcell Size 35 um,Photon Detection Efficiency 41%,No. of microcells 504,Gain 3*10^6,Spectral Range 300-950nm
2-4 weeks $254.20
SIM_SiPM_03B
SIM_SiPM_03B,Active Area 3*3mm,Microcell Size 20 um,Photon Detection Efficiency 31%,No. of microcells 10998,Gain 1*10^6,Spectral Range 300-950nm
2-4 weeks $268.80
SIM_SiPM_03C
SIM_SiPM_03C,Active Area 3*3mm,Microcell Size 35 um,Photon Detection Efficiency 41%,No. of microcells 4774,Gain 3*10^6,Spectral Range 300-950nm
2-4 weeks $268.80
SIM_SiPM_03D
SIM_SiPM_03D,Active Area 3*3mm,Microcell Size 50 um,Photon Detection Efficiency 47%,No. of microcells 2668,Gain 6*10^6,Spectral Range 300-950nm
12-16 weeks $268.80
SIM_SiPM_06C
SIM_SiPM_06C,Active Area 6*6mm,Microcell Size 35 um,Photon Detection Efficiency 41%,No. of microcells 10980,Gain 3*10^6,Spectral Range 300-950nm
2-4 weeks $283.50

SIM_SiPM_06C - Parameter

SIM_SiPM_03D - Parameter

SIM_SiPM_03C - Parameter

SIM_SiPM_03B - Parameter

SIM_SiPM_01C - Parameter

SIM_SiPM_01B - Parameter

SIM_SiPM_01A - Parameter

SIM_SiPM_06C - Download

SIM_SiPM_03D - Download

SIM_SiPM_03C - Download

SIM_SiPM_03B - Download

SIM_SiPM_01C - Download

SIM_SiPM_01B - Download

SIM_SiPM_01A - Download

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Compare Model Drawings & Specs Availability Reference Price
(USD)