Photodiode Detector (PD) with amplification (800-1700 nm)

SIMTRUM's photodetector series is specifically designed for precision optical detection across the visible to near-infrared (NIR) spectral range. Boasting both fixed-gain and switchable-gain models, this series delivers exceptional flexibility for laboratory, industrial, and original equipment manufacturer (OEM) applications.

The product modules incorporate indium gallium arsenide (InGaAs) photodiodes, featuring low noise, fast response speed, and outstanding stability. Fixed-gain versions offer maximum bandwidth and a streamlined operating experience, while switchable-gain models enable users to optimize the dynamic range for varying signal intensities without compromising measurement accuracy.

Whether for weak light signal monitoring, pulsed laser diagnostics, or integration into automated systems, our photodetectors consistently deliver reliable performance. Engineered with a compact form factor, a robust electrical shielding structure, and convenient electrical output interfaces, the products ensure seamless system integration.

Dimensions

Product Model	ST-PDA150000- InGaAs0	ST-PDA020000- InGaAs0	ST-PDA002000- InGaAs0	ST-PDA000200-InGaAs0	ST-PDAVG-InGaAs0 (Adjustable Gain)
Wavelength	800-1700 nm	800-1700 nm	800-1700 nm	800-1700 nm	800-1700 nm
Peak Responsivity	1.10A/W @ 1550 nm	1.10A/W @ 1550 nm	1.10A/W @ 1550 nm	1.10A/W @ 1550 nm	1.10A/W @ 1550 nm
Effective Area	D = 1 mm, S = 0.5 mm^2	D = 1 mm, S = 0.5 mm^2	D = 1 mm, S = 0.5 mm^2	D = 1 mm, S = 0.5 mm^2	D = 1 mm, S = 0.5 mm^2
Rise Time	2.3 ns	18ns	145ns	1.4us	2ns-250us
Bandwidth	150 MHz	21.2MHz	2.61MHz	271KHz	200 MHz-1.52 kHz
Gain at 50 Ω Load	0.1 kV/A	0.72kV/A	5.85kV/A	56.3kV/A	19.08 V/A-10 MV/A
Noise-Equivalent Power (NEP) pW/√Hz	23.6	7.9	8.71	7.87	47.12-8.34
Output Voltage	0~-4 V	0~-4 V	0~-4 V	0~-4 V	0~-4 V

Test image

Spectral response of InGaAs photodetector

Our diode detector with amplification (wavelength 800-1700 nm) is highly suitable for use in the following scenarios:

Laser power and stability monitoring: suitable for continuous wave and pulse laser diagnosis in the ultraviolet near-infrared wavelength range, and can achieve precise feedback control in laboratory devices, industrial laser processing, and optical alignment systems.
Time resolution and high-speed measurement: The high bandwidth model supports fast transient detection, optical modulation research, and pulse characterization in spectroscopy, LiDAR, and communication testing.
Spectroscopy and analytical instruments: The wide spectral coverage allows them to be integrated into absorption, fluorescence, and scattering detection platforms used in life sciences, environmental monitoring, and material characterization.
Weak light and precision detection: High gain configuration can achieve weak signal acquisition, suitable for cavity reflection monitoring, interferometry, single photon precursor detection, and alignment of ultra cold atoms or quantum optics experiments.
OEM and system integration: Compact packaging, electrical output compatibility, and customization options make it suitable for embedded sensing, production testing equipment, and automated optical monitoring systems.

Schematic diagram:

Advantages:

Wide optical spectral range: Offers InGaAs photodetectors covering 800-1700 nm, compatible with a variety of light sources and measurement requirements.
Wide bandwidth range: Through the meticulously optimized design of photodiodes and transimpedance amplifiers (TIA), the detectors feature high-speed response capability, applicable to continuous wave and fast pulse applications, covering a wide range of scenarios from low-frequency monitoring to hundreds of megahertz detection.
Wide gain selection range: Users can select fixed-gain or switchable-gain configurations to achieve precise control over the dynamic range. High-gain settings support weak signal detection, while low-gain settings preserve bandwidth and avoid saturation under high optical power.
Excellent temperature stability: For applications requiring ultra-low noise and long-term drift suppression, a thermoelectric cooling (TEC) option is provided to stabilize the operating temperature and minimize dark current.
Excellent temperature stability: For applications requiring ultra-low noise and long-term drift suppression, a thermoelectric cooling (TEC) option is provided to stabilize the operating temperature and minimize dark current.

Q: How to select photodetectors with different effective areas?

A: The selection of effective area primarily depends on your application scenario. It should be noted that a larger effective area will allow more stray light to enter the detector. Simultaneously, an excessively small effective area will require you to perform beam reduction on the incident light. Therefore, please select the most suitable effective area for your specific use case.

Q: Is it necessary to know the optical power when selecting a PD?

A: Yes, it is. The detectable optical power range of a PD is typically from the microwatt (μW) to milliwatt (mW) level. If your optical power is below the μW level, please switch to an SiPM or PMT. If your optical power exceeds the mW level, you also need to attenuate the light, for example, by using an ND filter (neutral density filter).

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	Availability	Reference Price (USD)
ST-PDAVG-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:2ns-250us;Bandwidth:200 MHz-1.52 kHz;Gain at 50 Ω Load:19.08 V/A-10 MV/A;Noise-Equivalent Power (NEP) (pW/√Hz):47.12-8.34;Output Voltage:0~-4V	Contact us	Request for quote
ST-PDA150000-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:2.3 ns;Bandwidth:150 MHz;Gain at 50 Ω Load:0.1 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):23.6;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA020000-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:18 ns;Bandwidth:21.2 MHz;Gain at 50 Ω Load:0.72 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.9;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA002000-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:145 ns;Bandwidth:2.61MHz;Gain at 50 Ω Load:5.85 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):8.71;Output Voltage:0~-4 V	Contact us	Request for quote
ST-PDA000200-InGaAs0 Wavelength:800-1700 nm;Peak Responsivity:1.10A/W @ 1550 nm;Effective Area:D = 1 mm, S = 0.5 mm^2;Rise Time:1.4us;Bandwidth:271KHz;Gain at 50 Ω Load:56.3 kV/A;Noise-Equivalent Power (NEP) (pW/√Hz):7.87;Output Voltage:0~-4 V	Contact us	Request for quote

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Photodiode Detector (PD) with amplification (800-1700 nm) | SIMTRUM Photonics Store

ST-PDA000200-InGaAs0 - Parameter

ST-PDA002000-InGaAs0 - Parameter

ST-PDA020000-InGaAs0 - Parameter

ST-PDA150000-InGaAs0 - Parameter

ST-PDAVG-InGaAs0 - Parameter

ST-PDA000200-InGaAs0 - Download

ST-PDA002000-InGaAs0 - Download

ST-PDA020000-InGaAs0 - Download

ST-PDA150000-InGaAs0 - Download

ST-PDAVG-InGaAs0 - Download

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