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Photodiodes(Wavelength 180-200nm) | SIMTRUM Photonics Store

Photodiodes(Wavelength 180-200nm)
Conventional photodetectors face critical challenges in the DUV/VUV spectral range, particularly within the 180–200 nm band, including a sharp drop in responsivity, weak signal output, and poor long-term stability. Traditional silicon-based detectors typically exhibit quantum efficiencies of less than 5% in this wavelength region and are highly susceptible to environmental interference, resulting in low signal-to-noise ratios (SNR) and unreliable measurement data. Specifically engineered for these demanding applications, this product achieves high responsivity, low noise, and exceptional long-term stability in the target band through material and process innovations, making it a professional alternative to unsuitable general-purpose devices.

 

 

Dimensions
 PD-VUV-M-1  
 PD-VUV-M-6
 PD-VUV-M-25 
 PD-VUV-C-20
 
 PD-VUV-C-64
 

Product Model

PD-VUV-M-1

PD-VUV-M-6

PD-VUV-M-25

PD-VUV-C-20

PD-VUV-C-64

Spectral response range

180-200nm

180-200nm

180-200nm

180-200nm

180-200nm

Chip size

1 mm^2

6.25 mm^2

25 mm^2

19.6 mm^2

63.5 mm^2

Responsivity

50mA/W@193nm

50mA/W@193nm

50mA/W@193nm

50mA/W@193nm

50mA/W@193nm

Dark current

< 100 pA

< 10 pA

< 10 pA

< 100 pA

< 100 pA

Shunt resistance (@±10mV)

-

-

-

> 10 GΩ

> 10 GΩ

Capacitance (@ 0 V and 1 MHz)

27 pF

170 pF

960 pF

565 pF

2.4 nF

Rise Time (Vr=0 V, RL=50 Ω

< 1 μS

< 1 μS

< 2 μS

< 1 μS

< 2 μS

Package

TO-46

TO-39

TO-8

Ceramic package

Ceramic package

 

 

Test image

Our photodiodes (180–200 nm wavelength) are ideally suited for the following applications:

 

  • DUV photolithography systems
  • Excimer lasers
  • DUV/VUV light sources
  • VUV ultraviolet spectrometers
  • Space astronomy observations
  • VUV synchrotron radiation source monitoring

DUV/VUV photons carry energy far exceeding the bandgap of silicon carbide (SiC). As a result, incident photons can excite electrons from the valence band to the conduction band within an extremely shallow depth near the material surface, instantaneously generating electron-hole pairs. Simultaneously, a strong electric field region is formed within the depletion region—located at a depth of several nanometers to tens of nanometers in the outermost layer of the device. Under the influence of this strong electric field, photogenerated electrons and holes drift rapidly in opposite directions: electrons move toward the n-type region, while holes migrate to the p-type region. This directional carrier movement generates a photocurrent in the external circuit, whose intensity is proportional to the incident DUV/VUV light intensity, thereby enabling precise detection and measurement of DUV/VUV radiation.

 

Furthermore, owing to SiC’s inherent advantages—including high critical displacement energy, low intrinsic carrier concentration, and excellent high-temperature stability—the device achieves high quantum efficiency (QE), outstanding radiation resistance, and low dark current.

 

 

Advantages:

 

  • Multiple photosensitive areas available, including ultra-large photosensitive areas
  • High quantum efficiency (QE)
  • Low dark current
  • Excellent radiation resistance

Q: How to choose between TO packaging and ceramic packaging?

A: Ceramic packaging uses hermetic sealing, while TO packaging is mostly non-hermetic or resin-filled sealed. Therefore, ceramic packaging is more recommended for harsh environments. Additionally, ceramic packaging has a higher thermal conductivity, which is more conducive to device stability, but it is also more expensive than TO packaging.


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Search Reset
Compare Model Drawings & Specs Availability Reference Price
(USD)
PD-VUV-M-1
Spectral response range:180-200nm;Chip size:1 mm^2;Responsivity:50mA/W@193nm;Dark current:< 100 pA;Capacitance (@ 0 V and 1 MHz):27 pF;Rise Time (Vr=0 V, RL=50 Ω):< 1 μS;Package:TO-46
Contact us Request for quote
PD-VUV-M-6
Spectral response range:180-200nm;Chip size:6.25mm^2;Responsivity:50mA/W@193nm;Dark current:< 10 pA;Capacitance (@ 0 V and 1 MHz):17 0pF;Rise Time (Vr=0 V, RL=50 Ω):< 1 μS;Package:TO-39
Contact us Request for quote
PD-VUV-M-25
Spectral response range:180-200nm;Chip size:25 mm^2;Responsivity:50mA/W@193nm;Dark current:< 10 pA;Capacitance (@ 0 V and 1 MHz):960 pF;Rise Time (Vr=0 V, RL=50 Ω):< 2 μS;Package:TO-8
Contact us Request for quote
PD-VUV-C-20
Spectral response range:180-200nm;Chip size:19.6 mm^2;Responsivity:50mA/W@193nm;Dark current:< 100 pA;Capacitance (@ 0 V and 1 MHz):565 pF;Rise Time (Vr=0 V, RL=50 Ω):< 1 μS
Contact us Request for quote
PD-VUV-C-64
Spectral response range:180-200nm;Chip size:63.5 mm^2;Responsivity:50mA/W@193nm;Dark current:< 100 pA;Capacitance (@ 0 V and 1 MHz):2.4 nF;Rise Time (Vr=0 V, RL=50 Ω):< 2 μS
Contact us Request for quote

PD-VUV-C-64 - Parameter

PD-VUV-C-20 - Parameter

PD-VUV-M-25 - Parameter

PD-VUV-M-6 - Parameter

PD-VUV-M-1 - Parameter

PD-VUV-C-64 - Download

PD-VUV-C-20 - Download

PD-VUV-M-25 - Download

PD-VUV-M-6 - Download

PD-VUV-M-1 - Download

Accessories

Compare Model Drawings & Specs Availability Reference Price
(USD)