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Photodiodes(Wavelength 5-125 nm) | SIMTRUM Photonics Store

Photodiodes(Wavelength 5-125 nm)
Conventional photodetectors face critical challenges in the Extreme Ultraviolet (EUV) spectral range, particularly within the 5–125 nm band, including a sharp drop in responsivity, weak signal output, and significant stability issues. Traditional silicon-based detectors typically exhibit quantum efficiencies (QE) of less than 5% in this wavelength region and are highly susceptible to environmental interference, resulting in low signal-to-noise ratios (SNR) and unreliable measurement data. Specifically engineered for these demanding applications, this product achieves high responsivity, low noise, and exceptional long-term stability in the target band through material and process innovations, making it a professional alternative to unsuitable general-purpose devices.

 

 

Dimensions
 PD-EUV-M-6
 PD-EUV-M-25
PD-EUV-C-20   
 PD-EUV-C-64

Product Model

PD-EUV-M-6

PD-EUV-M-25

PD-EUV-C-20

PD-EUV-C-64

Spectral response range

5-125nm

5-125nm

5-125nm

5-125nm

Chip size

6.25 mm^2

25 mm^2

19.6 mm^2

63.5 mm^2

Responsivity

58mA/W@13.5nm

58mA/W@13.5nm

58mA/W@13.5nm

58mA/W@13.5nm

Dark current

< 10 pA

< 10 pA

< 100 pA

< 100 pA

Shunt resistance (@±10mV)

-

-

> 10 GΩ

> 10 GΩ

Capacitance (@ 0 V and 1 MHz)

175 pF

960 pF

565 pF

2.4 nF

Rise Time (Vr=0 V, RL=50 Ω

< 1 μS

< 2 μS

< 1 μS

< 2 μS

Package

TO-39

TO-8

Ceramic package

Ceramic package

 

Test image

Our photodiodes (wavelength 5-125nm) are highly suitable for use in the following scenarios:

 

  • EUV lithography machine
  • Excimer laser
  • EUV light source
  • EUV ultraviolet spectrometer
  • EUV synchrotron radiation light source monitoring

EUV (Extreme Ultraviolet) photons carry energy far exceeding the bandgap of silicon carbide (SiC). As a result, incident photons can excite electrons from the valence band to the conduction band within an extremely shallow depth near the material surface, instantaneously generating electron-hole pairs. Simultaneously, a strong electric field region is formed within the depletion region—located at a depth of several nanometers to tens of nanometers in the outermost layer of the device. Under the influence of this strong electric field, photogenerated electrons and holes drift rapidly in opposite directions: electrons move toward the n-type region, while holes migrate to the p-type region. This directional carrier movement generates a photocurrent in the external circuit, whose intensity is proportional to the incident EUV light intensity, thereby enabling precise detection and measurement of EUV radiation.

 

Furthermore, owing to SiC’s inherent advantages—including high critical displacement energy, low intrinsic carrier concentration, and excellent high-temperature stability—the device achieves high quantum efficiency (QE), outstanding radiation resistance, and low dark current.

 

 

Advantages:

 

  • Multiple photosensitive areas available, including ultra-large photosensitive areas
  • High quantum efficiency (QE)
  • Low dark current
  • Excellent radiation resistance

Q: How to choose between TO packaging and ceramic packaging?

A: Ceramic packaging uses hermetic sealing, while TO packaging is mostly non-hermetic or resin-filled sealed. Therefore, ceramic packaging is more recommended for harsh environments. Additionally, ceramic packaging has a higher thermal conductivity, which is more conducive to device stability, but it is also more expensive than TO packaging.


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Search Reset
Compare Model Drawings & Specs Availability Reference Price
(USD)
PD-VUV-M-6
Spectral response range:5-125nm;Chip size:6.25mm^2;Responsivity:58mA/W@13.5nm;Dark current:< 10 pA;Capacitance (@ 0 V and 1 MHz):175 pF;Rise Time (Vr=0 V, RL=50 Ω):< 1 μS;Package:TO-39
Contact us Request for quote
PD-VUV-M-25
Spectral response range:5-125nm;Chip size:25mm^2;Responsivity:58mA/W@13.5nm;Dark current:< 10 pA;Capacitance (@ 0 V and 1 MHz):960 pF;Rise Time (Vr=0 V, RL=50 Ω):< 2 μS;Package:TO-8
Contact us Request for quote
PD-VUV-C-20
Spectral response range:5-125nm;Chip size:19.6mm^2;Responsivity:58mA/W@13.5nm;Dark current:< 100 pA;Capacitance (@ 0 V and 1 MHz):565pF;Rise Time (Vr=0 V, RL=50 Ω):< 1 μS
Contact us Request for quote
PD-VUV-C-64
Spectral response range:5-125nm;Chip size:63.5mm^2;Responsivity:58mA/W@13.5nm;Dark current:< 100 pA;Capacitance (@ 0 V and 1 MHz):2.4nF;Rise Time (Vr=0 V, RL=50 Ω):< 2 μS
Contact us Request for quote

PD-VUV-C-64 - Parameter

PD-VUV-C-20 - Parameter

PD-VUV-M-25 - Parameter

PD-VUV-M-6 - Parameter

PD-VUV-C-64 - Download

PD-VUV-C-20 - Download

PD-VUV-M-25 - Download

PD-VUV-M-6 - Download

Accessories

Compare Model Drawings & Specs Availability Reference Price
(USD)